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mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifiers the mw7ic2725n wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 mhz. this multi- stage structure is rated for 26 to 32 volt operation and covers all typical cellular base station modulation formats. ? typical wimax performance: v dd = 28 volts, i dq1 = 77 ma, i dq2 = 275 ma, p out = 4 watts avg., f = 2700 mhz, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. power gain 28.5 db power added efficiency 17% device output signal par 9 db @ 0.01% probability on ccdf acpr @ 8.5 mhz offset -50 dbc in 1 mhz channel bandwidth driver applications ? typical wimax performance: v dd = 28 volts, i dq1 = 77 ma, i dq2 = 275 ma, p out = 26 dbm avg., f = 2700 mhz, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. power gain 27.8 db power added efficiency 3.2% device output signal par 9 db @ 0.01% probability on ccdf acpr @ 8.5 mhz offset -56 dbc in 1 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 32 vdc, 2600 mhz, 40 watts cw output power (3 db input overdrive from rated p out ) ? stable into a 5:1 vswr. all spurs below -60 dbc @ 100 mw to 5 w cw p out ? typical p out @ 1 db compression point 25 watts cw features ? 100% par tested for guaranteed output power capability ? characterized with series equivalent large-signal impedance parameters and common source s-parameters ? on-chip matching (50 ohm input, dc blocked) ? integrated quiescent current temperature compensation with enable/disable function (1) ? integrated esd protection ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. 1. refer to an1977, quiescent current thermal tracking circuit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes - an1977 or an1987. mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 2500-2700 mhz, 4 w avg., 28 v wimax rf ldmos wideband integrated power amplifiers case 1886-01 to-270 wb-16 plastic mw7ic2725nr1 case 1887-01 to-270 wb-16 gull plastic mw7ic2725gnr1 case 1329-09 to-272 wb-16 plastic mw7ic2725nbr1 document number: mw7ic2725n rev. 3, 1/2010 freescale semiconductor technical data figure 1. functional block diagram quiescent current temperature compensation (1) v ds1 rf in v gs1 rf out /v ds2 v gs2 v ds1 (top view) figure 2. pin connections note: exposed backside of the package is the source terminal for the transistors. gnd nc rf in v gs1 gnd rf out /v ds2 gnd 1 2 3 4 5 6 7 8 16 15 14 13 12 v gs2 9 10 gnd 11 v ds1 nc nc nc v ds1 nc nc ? freescale semiconductor, inc., 2008, 2010. all rights reserved.
2 rf device data freescale semiconductor mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 table 1. maximum ratings rating symbol value unit drain-source voltage v ds -0.5, +65 vdc gate-source voltage v gs -0.5, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg -65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c input power p in 22 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case wimax application stage 1, 28 vdc, i dq1 = 77 ma (case temperature 75 c, p out = 4 w avg.) stage 2, 28 vdc, i dq2 = 275 ma cw application stage 1, 28 vdc, i dq1 = 77 ma (case temperature 81 c, p out = 25 w cw) stage 2, 28 vdc, i dq2 = 275 ma r jc 5.9 1.4 5.5 1.3 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22-a114) 1b (minimum) machine model (per eia/jesd22-a115) a (minimum) charge device model (per jesd22-c101) ii (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22-a113, ipc/jedec j-std-020 3 260 c table 5. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit stage 1 - off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss 1 adc gate-source leakage current (v gs = 1.5 vdc, v ds = 0 vdc) i gss 1 adc stage 1 - on characteristics gate threshold voltage (v ds = 10 vdc, i d = 20 adc) v gs(th) 1.2 1.9 2.7 vdc gate quiescent voltage (v ds = 28 vdc, i dq1 = 77 ma) v gs(q) 2.7 vdc fixture gate quiescent voltage (v dd = 28 vdc, i dq1 = 77 madc, measured in functional test) v gg(q) 12.5 15.8 19.5 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. (continued)
mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit stage 2 - off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss 1 adc gate-source leakage current (v gs = 1.5 vdc, v ds = 0 vdc) i gss 1 adc stage 2 - on characteristics gate threshold voltage (v ds = 10 vdc, i d = 80 adc) v gs(th) 1.2 1.9 2.7 vdc gate quiescent voltage (v ds = 28 vdc, i dq2 = 275 madc) v gs(q) 2.7 vdc fixture gate quiescent voltage (v dd = 28 vdc, i dq2 = 275 madc, measured in functional test) v gg(q) 11 14 18 vdc drain-source on-voltage (v gs = 10 vdc, i d = 800 madc) v ds(on) 0.15 0.47 0.8 vdc stage 2 - dynamic characteristics (1) output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss 111 pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 77 ma, i dq2 = 275 ma, p out = 4 w avg., f = 2700 mhz, wimax, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. acpr measured in 1 mhz channel bandwidth @ 8.5 mhz offset. power gain g ps 25.5 28.5 30.5 db power added efficiency pae 15 17 % output peak-to-average ratio @ 0.01% probability on ccdf par 9 db adjacent channel power ratio acpr -50 -46 dbc input return loss irl -15 -10 db typical performances ofdm signal - 10 mhz channel bandwidth (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 77 ma, i dq2 = 275 ma, p out = 4 w avg., f = 2700 mhz, wimax, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. relative constellation error (2) rce -33 db error vector magnitude (2) evm 2.2 % rms 1. part internally matched both on input and output. (continued) 2. rce = 20log(evm/100)
4 rf device data freescale semiconductor mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 table 5. electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 77 ma, i dq2 = 275 ma, 2500- 2700 mhz bandwidth p out @ 1 db compression point, cw p1db 25 w imd symmetry @ 27 w pep, p out where imd third order intermodulation 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym 50 mhz vbw resonance point (imd third order intermodulation inflection point) vbw res 90 mhz gain flatness in 200 mhz bandwidth @ p out = 4 w avg. g f 0.5 db average deviation from linear phase in 200 mhz bandwidth @ p out = 25 w cw 2.1 average group delay @ p out = 25 w cw, f = 2600 mhz delay 2.3 ns part-to-part insertion phase variation @ p out = 25 w cw, f = 2600 mhz, six sigma window ? 22 gain variation over temperature (-30 c to +85 c) g 0.036 db/ c output power variation over temperature (-30 c to +85 c) p1db 0.003 dbm/ c typical driver performances (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 77 ma, i dq2 = 275 ma, p out = 26 dbm avg., f = 2700 mhz, wimax, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. acpr measured in 1 mhz channel bandwidth @ 8.5 mhz offset. power gain g ps 27.8 db power added efficiency pae 3.2 % output peak-to-average ratio @ 0.01% probability on ccdf par 9 db adjacent channel power ratio acpr -56 dbc input return loss irl -13 db relative constellation error @ p out = 1.25 w avg. (1) rce -40 db 1. rce = 20log(evm/100)
mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 5 rf device data freescale semiconductor figure 3. mw7ic2725nr1(gnr1)(nbr1) test circuit schematic z9 0.040 x 0.061 microstrip z10 0.020 x 0.050 microstrip z11 0.050 x 0.050 microstrip z12 0.050 x 0.027 microstrip z13* 0.338 x 0.020 microstrip z14 1.551 x 0.027 microstrip pcb rogers r04350b, 0.0133 , r = 3.48 * line length includes microstrip bends z1 0.500 x 0.027 microstrip z2 0.075 x 0.127 microstrip z3 1.640 x 0.027 microstrip z4 0.100 x 0.042 microstrip z5 0.151 x 0.268 microstrip z6 0.025 x 0.268 x 0.056 taper z7 0.050 x 0.056 microstrip z8 0.356 x 0.056 microstrip z2 rf input v g1 z5 rf output c11 1 2 3 4 5 6 7 8 14 13 12 11 10 9 15 16 nc nc nc dut z3 v dd1 quiescent current temperature compensation z1 nc z7 z11 c10 nc nc z8 z10 z9 c7 c8 c9 c17 z4 c6 c5 c4 r4 r5 r6 c3 c2 c1 r1 r2 r3 v g2 nc nc nc nc z6 v d2 c13 c14 c15 c16 28 v b1 z13 z12 z14 c12 table 6. mw7ic2725nr1(gnr1)(nbr1) test circuit com ponent designations and values part description part number manufacturer b1 47 , 100 mhz short ferrite bead 2743019447 fair-rite c1, c4, c7, c12, c15 6.8 pf chip capacitors atc600s6r8ct250xt atc c2, c5, c8, c13 10 nf chip capacitors c0603c103j5rac kemet c3, c6, c9, c14 1 f, 50 v chip capacitors grm32rr71h105ka01b murata c10 2.4 pf chip capacitor atc600s2r4bt250xt atc c11 3.3 pf chip capacitor atc600s3r3bt250xt atc c16, c17 10 f, 50 v chip capacitors grm55dr61h106ka88b murata r1, r4 12 k , 1/4 w chip resistors crcw12061202fkea vishay r2, r3, r5, r6 1 k , 1/4 w chip resistors crcw12061001fkea vishay
6 rf device data freescale semiconductor mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 figure 4. mw7ic2725nr1(gnr1)(nbr1) test circuit component layout c17 c9 c8 c7 c4 c5 c1 c2 r4 r5 r6 r1 r2 r3 v g1 v g2 c6 c3 c10 c11 c12 c16 b1 c13 c14 c15 mw7ic2725n cut out area rev. 1.3
mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 7 rf device data freescale semiconductor typical characteristics irl, input return loss (db) 2500 irl g ps acpr f, frequency (mhz) figure 5. wimax broadband performance @ p out = 4 watts avg. -24 -16 -18 -20 -22 26.6 28.6 28.4 28.2 -58 18 17 16 15 -53 -54 -55 -56 pae, power added efficiency (%) g ps , power gain (db) 28 27.8 27.4 27.2 27 26.8 2525 2550 2575 2600 2625 2650 2675 2700 14 -57 -26 parc parc (db) -1 -0.2 -0.4 -0.6 -0.8 -1.2 acpr (dbc) 27.6 -1 -0.2 -0.4 -0.6 -0.8 -1.2 irl g ps acpr f, frequency (mhz) figure 6. wimax broadband performance @ p out = 26 dbm avg. 26.6 28.6 28.4 28.2 -61 3.5 3 2.5 2 -56 -57 -58 -59 g ps , power gain (db) 28 27.8 27.6 27.4 27.2 27 26.8 1.5 -60 irl, input return loss (db) -30 -10 -15 -20 -25 -35 2500 2525 2550 2575 2600 2625 2650 2675 2700 parc acpr (dbc) parc (db) figure 7. power gain versus output power @ i dq1 = 77 ma 100 23 30 1 i dq2 = 412 ma 344 ma p out , output power (watts) cw v dd = 28 vdc i dq1 = 77 ma f = 2600 mhz 137 ma 275 ma 28 27 26 10 g ps , power gain (db) 29 206 ma 25 24 0.1 figure 8. power gain versus output power @ i dq2 = 275 ma 100 23 30 1 i dq1 = 103 ma 96 ma p out , output power (watts) cw v dd = 28 vdc i dq2 = 275 ma f = 2600 mhz 28 27 26 10 g ps , power gain (db) 29 25 24 0.1 77 ma 58 ma 39 ma v dd = 28 vdc, p out = 4 w (avg.), i dq1 = 77 ma, i dq2 = 275 ma ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf v dd = 28 vdc, p out = 26 dbm (avg.), i dq1 = 77 ma, i dq2 = 275 ma ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth input signal par = 9.5 db @ 0.01% probability on ccdf pae pae, power added efficiency (%) pae
8 rf device data freescale semiconductor mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 typical characteristics figure 9. intermodulation distortion products versus tone spacing two-t one spacing (mhz) 10 -60 0 im3-u -20 -30 -50 1 100 imd, intermodulation distortion (dbc) -40 im3-l im5-u im5-l im7-l im7-u v dd = 28 vdc, p out = 27 w (pep), i dq1 = 77 ma i dq2 = 275 ma, two-tone measurements (f1 + f2)/2 = center frequency of 2600 mhz figure 10. output peak-to-average ratio compression (parc) versus output power 1 p out , output power (watts) -1 -5 9 0 -2 output compression at 0.01% probability on ccdf (db) 1 12 15 5 35 30 25 20 15 10 pae, power added eficiency (%) -2 db = 6.21 w acpr parc acpr (dbc) -60 -30 -35 -40 -50 -45 -55 29 g ps , power gain (db) 28.5 28 27.5 27 26 g ps 50 0 45 -60 -15 p out , output power (watts) avg. wimax t c = -40 c 85 c 10 1 40 35 30 25 20 -20 -25 -30 -35 -40 acpr (dbc) g ps pae, power added efficiency (%), g ps , power gain (db) -40 c 25 c acpr 15 10 -45 -50 figure 11. wimax, acpr, power gain and power added efficiency versus output power 26.5 -3 -4 6 3 -1 db = 4.01 w -3 db = 8.59 w -10 5 -55 25 c 85 c -40 c 25 c 85 c v dd = 28 vdc, i dq1 = 77 ma, i dq2 = 275 ma f = 2600 mhz, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf v dd = 28 vdc, i dq1 = 77 ma, i dq2 = 275 ma f = 2600 mhz, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf pae pae
mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 9 rf device data freescale semiconductor typical characteristics 3400 -5 25 1800 -50 0 s21 f, frequency (mhz) figure 12. broadband frequency response s11 -10 19 -20 13 -30 7 -40 1 2800 2600 2400 2200 2000 s11 (db) s21 (db) v dd = 28 vdc i dq1 = 77 ma, i dq2 = 275 ma 3000 3200 figure 13. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 4 w avg., and pae = 17%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 250 10 9 90 t j , junction temperature ( c) 10 8 10 4 110 130 150 170 190 mttf (hours) 210 230 2nd stage 1st stage 10 7 10 6 10 5 wimax test signal 10 0.0001 100 0 peak-t o-a verage (db) figure 14. ofdm 802.16d test signal 10 1 0.1 0.01 0.001 24 68 probability (%) input signal ofdm 802.16d, 64 qam 3 / 4 , 4 bursts 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf -60 -10 (db) -20 -30 -40 -50 -70 -80 -90 10 mhz channel bw 20 515 10 0 -5 -10 -20 f, frequency (mhz) figure 15. wimax spectrum mask specifications -15 acpr in 1 mhz integrated bw acpr in 1 mhz integrated bw
10 rf device data freescale semiconductor mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 z o = 50 z load f = 2700 mhz f = 2500 mhz z source f = 2500 mhz f = 2700 mhz v dd = 28 vdc, i dq1 = 77 ma, i dq2 = 275 ma, p out = 4 w avg. f mhz z source z load 2500 36.381 - j4.271 5.717 - j3.618 2525 36.041 - j3.328 5.624 - j3.187 2550 35.753 - j2.363 5.578 - j2.770 2575 35.516 - j1.380 5.589 - j2.412 2600 35.333 - j0.381 5.586 - j2.088 2625 35.203 + j0.635 5.579 - j1.807 2650 35.126 + j1.664 5.552 - j1.559 2675 35.104 + j2.707 5.564 - j1.335 2700 35.138 + j3.760 5.568 - j1.164 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 16. series equivalent source and load impedance z source z load input matching network device under test output matching network
mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 11 rf device data freescale semiconductor table 7. common source s-parameters (v dd = 28 v, i dq1 = 77 ma, i dq2 = 275 ma, t c = 25 c, 50 ohm system) f mhz s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | 1500 0.735 61.0 0.001 -167.6 0.000501 26.6 0.992 167.9 1550 0.729 53.3 0.004 -146.0 0.000361 34.7 0.993 166.3 1600 0.715 46.5 0.014 -146.4 0.000114 109.5 0.991 164.6 1650 0.695 39.8 0.039 -152.5 0.000385 148.4 0.992 162.7 1700 0.665 32.9 0.110 -166.8 0.000773 155.6 0.989 160.5 1750 0.619 25.0 0.299 169.4 0.00134 153.2 0.979 157.8 1800 0.549 15.1 0.708 134.4 0.00198 143.0 0.944 155.2 1850 0.452 2.6 1.335 96.3 0.00250 131.2 0.903 153.9 1900 0.332 -14.4 2.195 62.1 0.00290 121.7 0.879 153.0 1950 0.199 -40.1 3.445 32.7 0.00320 113.8 0.847 151.0 2000 0.089 -91.9 5.724 4.8 0.00345 108.5 0.817 147.7 2050 0.078 167.4 10.041 -26.2 0.00382 107.0 0.749 140.6 2100 0.116 90.3 19.072 -65.1 0.00525 105.3 0.571 125.2 2150 0.170 -13.2 32.642 -126.0 0.00781 77.9 0.054 160.2 2200 0.192 -93.2 31.339 171.3 0.00640 41.0 0.555 -144.4 2250 0.177 -123.0 26.174 130.3 0.00432 24.9 0.726 -160.3 2300 0.163 -132.6 23.605 98.7 0.00294 22.3 0.770 -167.1 2350 0.153 -140.5 22.427 70.0 0.00224 31.0 0.789 -170.1 2400 0.119 -153.6 21.922 41.7 0.00208 42.5 0.800 -171.0 2450 0.059 -165.3 21.172 14.2 0.00216 48.9 0.820 -171.2 2500 0.014 -50.7 20.172 -12.5 0.00227 48.9 0.850 -171.3 2550 0.055 -55.0 19.222 -39.5 0.00213 51.4 0.889 -171.7 2600 0.056 -84.7 17.366 -66.8 0.00209 57.8 0.933 -173.2 2650 0.029 177.4 14.562 -91.5 0.00247 65.6 0.961 -175.8 2700 0.069 103.3 12.199 -1 11.7 0.00286 62.2 0.968 -178.0 2750 0.122 84.1 10.485 -130.4 0.00308 56.3 0.969 -179.5 2800 0.287 59.8 8.086 -154.4 0.00326 50.9 0.969 179.3 2850 0.184 -5.4 7.102 -152.5 0.00292 39.2 0.966 178.6 2900 0.129 -17.4 6.753 -169.3 0.00256 38.6 0.969 178.0 2950 0.128 -41.0 6.107 175.4 0.00232 38.5 0.970 177.4 3000 0.164 -65.7 5.445 160.8 0.00213 39.9 0.972 176.9 3050 0.223 -86.2 4.867 146.7 0.00196 42.0 0.972 176.4 3100 0.297 -100.4 4.363 133.2 0.00183 46.0 0.973 176.0 3150 0.374 -1 10.4 3.918 120.0 0.00176 51.4 0.974 175.5 3200 0.447 -1 18.0 3.534 107.2 0.00181 56.5 0.974 174.9 3250 0.515 -123.4 3.198 95.3 0.00191 60.9 0.975 174.3 3300 0.563 -128.0 2.951 83.3 0.00211 58.8 0.975 173.7 3350 0.619 -131.8 2.761 71.2 0.00206 63.0 0.976 173.0 3400 0.651 -136.0 2.581 58.8 0.00218 64.8 0.975 172.3 3450 0.671 -140.1 2.418 46.0 0.00237 68.3 0.975 171.6 (continued)
12 rf device data freescale semiconductor mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 table 7. common source s-parameters (v dd = 28 v, i dq1 = 77 ma, i dq2 = 275 ma, t c = 25 c, 50 ohm system) (continued) f mhz s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | 3500 0.679 -144.4 2.257 32.6 0.00265 68.5 0.974 171.0 3550 0.677 -147.9 2.054 19.2 0.00280 65.0 0.976 170.5 3600 0.661 -153.5 1.851 5.0 0.00281 67.1 0.976 170.0 3650 0.696 -153.8 1.644 -5.8 0.00328 69.3 0.976 169.6 3700 0.721 -161.3 1.453 -19.4 0.00350 65.8 0.977 169.4 3750 0.737 -168.1 1.243 -32.1 0.00357 64.5 0.978 169.2 3800 0.753 -174.7 1.042 -43.7 0.00374 64.5 0.979 169.2 3850 0.771 179.2 0.859 -54.3 0.00401 62.5 0.980 169.2 3900 0.788 174.4 0.708 -62.8 0.00407 58.4 0.980 169.3 3950 0.812 169.8 0.583 -71.5 0.00416 57.7 0.981 169.3 4000 0.829 166.0 0.477 -79.0 0.00427 55.8 0.982 169.3
mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 13 rf device data freescale semiconductor alternative peak tune load pull characteristics 19 50 6 p in , input power (dbm) v dd = 28 vdc, i dq1 = 77 ma, i dq2 = 275 ma pulsed cw, 10 sec(on), 10% duty cycle, f = 2500 mhz 42 40 38 36 34 79 811 10 14 12 actual ideal p1db = 44.61 dbm (29 w) 13 15 16 5 p out , output power (dbm) p3db = 45.73 dbm (36 w) note: load pull test fixture tuned for peak p1db output power @ 28 v 4 3 48 44 46 17 18 test impedances per compression level z source z load p1db 42.7 + j11.6 4.86 - j1.63 figure 17. pulsed cw output power versus input power @ 28 v @ 2500 mhz 20 50 6 p in , input power (dbm) v dd = 28 vdc, i dq1 = 77 ma, i dq2 = 275 ma pulsed cw, 10 sec(on), 10% duty cycle, f = 2700 mhz 42 40 38 36 32 79 811 10 14 12 actual ideal p1db = 45.42 dbm (28 w) 13 15 16 5 p out , output power (dbm) p3db = 44.46 dbm (35 w) note: load pull test fixture tuned for peak p1db output power @ 28 v 4 2 48 44 46 17 18 34 319 test impedances per compression level z source z load p1db 39.5 - j8.7 3.53 - j1.66 figure 18. pulsed cw output power versus input power @ 28 v @ 2700 mhz
14 rf device data freescale semiconductor mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 package dimensions
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mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 21 rf device data freescale semiconductor
22 rf device data freescale semiconductor mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1
mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 23 rf device data freescale semiconductor product documentation, tools and software refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family ? an3263: bolt down mounting method for high power rf transistors and rfics in over-molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over-molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software and tools, do a part number search at http://www.freescale.com, and select the part number link. go to the software & tools tab on the part's product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 june 2008 ? initial release of data sheet 1 july 2008 ? added mw7ic2725nbr1 device and corresponding case outline information to data sheet. 2 oct. 2008 ? added fig. 13, mttf versus junction temperature, p. 9 3 jan. 2010 ? modified vswr rating to show the 3 db overdrive capability, p. 1 ? maximum ratings table: added case operating temperature and set limit to 150 c. corrected maximum input power level to the tested value from 20 dbm to 22 dbm, p. 2 ? added an3789, clamping of high power rf transistors and rfics in over-molded plastic packages to product documentation, application notes, p. 23
24 rf device data freescale semiconductor mw7ic2725nr1 mw7ic2725gnr1 mw7ic2725nbr1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals, must be validated for each customer application by customer's technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008, 2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1-8-1, shimo-meguro, meguro-ku, tokyo 153-0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1-800-441-2447 or +1-303-675-2140 fax: +1-303-675-2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mw7ic2725n rev. 3, 1/2010

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